Abstract and subjects
Recently, considerable work has been directed at the development of an ultracompact X-ray free-electron laser (UCXFEL) based on emerging techniques in high-field cryogenic acceleration, with attendant dramatic improvements in electron beam brightness and state-of-the-art concepts in beam dynamics, magnetic undulators, and X-ray optics. A full conceptual design of a 1 nm (1.24 keV) UCXFEL with a length and cost over an order of magnitude below current X-ray free-electron lasers (XFELs) has resulted from this effort. This instrument has been developed with an emphasis on permitting exploratory scientific research in a wide variety of fields in a university setting. Concurrently, compact FELs are being vigorously developed for use as instruments to enable next-generation chip manufacturing through use as a high-flux, few nm lithography source. This new role suggests consideration of XFELs to urgently address emerging demands in the semiconductor device sector, as identified by recent national need studies, for new radiation sources aimed at chip manufacturing. Indeed, it has been shown that one may use coherent X-rays to perform 10-20 nm class resolution surveys of macroscopic, cm scale structures such as chips, using ptychographic laminography techniques. As the XFEL is a very promising candidate for realizing such methods, we present here an analysis of the issues and likely solutions associated with extending the UCXFEL to harder X-rays (above 7 keV), much higher fluxes, and increased levels of coherence, as well as methods of applying such a source for ptychographic laminography to microelectronic device measurements. We discuss the development path to move the concept to rapid realization of a transformative XFEL-based application, outlining both FEL and metrology system challenges.