Abstract and subjects
Charged excited states can accumulate on the surface of colloidal quantum dots (QDs), affecting their optoelectronic properties. In experimental samples, QDs often have non-stoichiometric structures, giving rise to cation-rich and anion-rich nanostructures. We explore the effect of charge on the ground- and excited-state properties of CdSe non-stoichiometric QDs (NS-QDs) of similar to 1.5 nm in size using density functional theory calculations. We compare two cases: (i) NS-QDs with a charge introduced by direct hole or electron injection and (ii) neutral NS-QDs with one removed surface ligand (with a dangling bond). Our calculations reveal that a neutral dangling bond has an effect on the electronic structure similar to that of the electron injection for the Cd-rich NS-QDs or hole injection for the Se-rich NS-QDs. In Cd-rich structures, either the injection of an electron or the removal of a passivating ligand results in the surface-localized half-filled trap state inside the energy gap. For Se-rich structures, either the injection of a hole or the removal of a ligand introduces surface-localized unoccupied trap states inside the energy gap. As a result, the charge localization formed by these two approaches leads to an appearance of low-energy electronic transitions strongly red-shifted from the main excitonic band of NS-QDs. These transitions related to a negative charge or a dangling bond exhibit weak optical activity in Cd-rich NS-QDs. Transitions related to a positive charge or a dangling bond are optically forbidden in Se-rich NS-QDs. In contrast, electron injection in Se-rich NS-QDs strongly increases the optical activity of the lowest-red-shifted charge-originated states.