High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

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Zhenyang Xia, Kai Zang, Dong Liu, Ming Zhou, Tong-June Kim, Huilong Zhang, Muyu Xue, Jeongpil Park, Matthew Morea, Jae Ha Ryu, …

Applied Physics Letters, Vol.111(8), p.81109

08/24/2017

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Instrumentation Related to Nuclear Science & Technology(46)

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Title: High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping
Authors/Creators - name: Zhenyang Xia
Kai Zang
Dong Liu
Ming Zhou
Tong-June Kim
Huilong Zhang
Muyu Xue
Jeongpil Park
Matthew Morea
Jae Ha Ryu
Tzu-Hsuan Chang
Jisoo Kim
Shaoqing Gong
Theodore I. Kamins
Zongfu Yu
Zhehui Wang
James S. Harris
Zhenqiang Ma
Publication Details: Applied Physics Letters, Vol.111(8), p.81109
Number of pages: 6 p.
Government Number: LA-UR-18-21146
Language: English
Resource Type: Journal article
DOI: https://doi.org/10.1063/1.4985591
Publication ISSN: 0003-6951
ISSN: 0003-6951