Impact of Oxidation Layer in the Resistive Switching Behavior of Nitride-Based Memristor Devices

Journal article

Open access

Peer reviewed

Di Zhang, Rohan Dhall, Chengyu Song, Matt Schneider, Stephen House, Sundar Kunwar, Hongyi Dou, Nick Cuccienco, Jim Ciston, John Watt, …

Microscopy and microanalysis, Vol.30(Supplement_1)

07/24/2024

Abstract and subjects

Oxidation

url

https://doi.org/10.1093/mam/ozae044.783View

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Title: Impact of Oxidation Layer in the Resistive Switching Behavior of Nitride-Based Memristor Devices
Authors/Creators - name: Di Zhang
Rohan Dhall
Chengyu Song
Matt Schneider
Stephen House
Sundar Kunwar
Hongyi Dou
Nick Cuccienco
Jim Ciston
John Watt
Winson Kuo
Michael Pettes
Haiyan Wang
Rodney McCabe
Aiping Chen
Matthew M. Schneider
Winson Chun Hsin Kuo
Nicholas Gerard Cucciniello
Publication Details: Microscopy and microanalysis, Vol.30(Supplement_1)
Publisher: Oxford University Press
Language: English
Resource Type: Journal article
DOI: https://doi.org/10.1093/mam/ozae044.783
Publication ISSN: 1431-9276; 1435-8115