Abstract and subjects
Electronic structure calculations are used to investigate the structures and relative energies of defect clusters formed between arsenic atoms and lattice vacancies in germanium and, for comparison, in silicon. It is energetically favorable to form clusters containing up to four arsenic atoms tetrahedrally coordinated around a vacancy. Using mass action analysis, the relative concentrations of arsenic atoms in different vacancy-arsenic clusters, unbound arsenic atoms, and unbound vacancies are predicted. At low temperatures the four arsenic-vacancy cluster is dominant over unbound vacancies while at higher temperatures unbound vacancies prevail. In terms of concentration, no intermediate size of cluster is ever of significance.