Jennifer Ann Hollingsworth

One of the central aims of the field of spintronics is the control of individual electron spins to effectively manage the transmission of quantized data. One well-known mechanism for controlling electronic spin transport is the chiral-induced spin-selectivity (CISS) effect in which a helical nanostructure imparts a preferential spin orientation on the electronic transport. One potential application of the CISS effect is as a transduction pathway between electronic spin and circularly polarized light within nonreciprocal photonic devices. In this work, we identify and quantify the degree of chiral-induced spin-selective electronic transport in helical polyaniline films using magnetoconductive atomic force microscopy (mcAFM). We then induce circularly polarized quantum light emission from CdSe/CdS core/shell quantum dots placed on these films, demonstrating a degree of circular polarization of up to similar to 21%. Utilizing time-resolved photoluminescence microscopy, we measure the radiative lifetime difference associated with left- and right-handed circular polarizations of single emitters. These lifetime differences, in combination with Kelvin probe mapping of the variation of surface potential with magnetization of the substrate, help establish an energy level diagram describing the spin-dependent transport pathways that enable the circularly polarized photoluminescence.

"Giant" or core/thick-shell quantum dots (gQDs) are an important class of solid-state quantum emitter characterized by strongly suppressed blinking and photobleaching under ambient conditions, and reduced nonradiative Auger processes. Together, these qualities provide distinguishing and useful functionality as single- and ensemble-photon sources. For many applications, operation at elevated temperatures and under intense photon flux is desired, but performance is strongly dependent on the synthetic method employed for thick-shell growth. Here, a comprehensive analysis of gQD structural properties "from the inside out" as a function of shell-growth method is reported: successive ionic layer adsorption and reaction (SILAR) and high-temperature continuous injection (HT-CI), or sequential combinations of the two. Key correlations across synthesis methods, structural features (interfacial alloying, stacking-fault density and surface-ligand identity), and performance metrics (quantum yield, single-gQD photoluminescence under thermal/photo stress, charging behavior and quantum-optical properties) are identified. Surprisingly, it is found that interfacial alloying is the strongest indicator of gQD stability under stress, but this parameter is not the determining factor for Auger suppression. Furthermore, quantum yield is strongly influenced by surface chemistry and can approach unity even in the case of high shell-defect density, while introduction of zinc-blende stacking faults increases the likelihood that a gQD exhibits charged-state emission. The functionally unique "giant" quantum dot-a nonblinking and nonphotobleaching room-temperature photon source-is the subject of numerous investigations of its optical properties and application demonstrations from 3D single-molecule tracking to light-emitting diodes. In this work, explicit synthesis-structure-function correlations are revealed as a blueprint for designing syntheses to produce nanoscale structures for long-term stability under harsh operating conditions of high-temperature and photon flux.image (c) 2023 WILEY-VCH GmbH